Schottky Diodes Optimized for Voltage Boosting Circuits

Toshiba Electronics Europe (TEE) expanded its extensive portfolio of diodes with the addition of six low reverse-current Schottky Barrier Diodes (SBDs). With a peak reverse voltage of 40V, the new CCS15F40, CUS15F40, CBS10F40, CUS10F40, CTS05F40, and CUS05F40 are suitable for voltage boosting circuits in white LED backlights and for liquid crystal displays in mobile devices like smartphones and tablet PCs.

High-speed, low-loss SBDs are activated by majority carriers, making them suitable for high-speed switching due to their low forward voltage and short reverse recovery time. The reverse current of the CCS15F40, one of the new products, is 25μA (max), which is an approximately 87 percent reduction compared to conventional products.

Additionally, the new SBD’s thermal runaway temperature is 35 degrees C higher than seen in conventional devices, contributing to stable circuit operations. The CCS15F40 features fast switching due to a low total capacitance of 130pF (typ.) at VR=0V. A low reverse current helps to lower power consumption of the devices, making thermal runaways unlikely, even in high-temperature environments.