ROHM Claims New Hybrid MOS Combines the Best Characteristics of MOSFETs and IGBTs

ROHM Semiconductor claims development of a new high-voltage transistor design which was demonstrated this week at PCIM Europe and which significantly reduces power consumption in power supplies and PFC circuits used in servers, industrial equipment, as well as home appliances. This new "Hybrid MOS" combines the device structures of super-junction MOSFETs and IGBTs, leading to a breakthrough product that features the high-speed switching, low current characteristics of MOSFETs with the high voltage resistance properties of IGBTs. The result is significant energy savings across the full current range, from small to large currents.

In recent years, with the increasing drive towards greater energy savings and due to changes in energy conservation regulations there is a growing trend of listing the APF (Annual Performance Factor, the energy consumption efficiency when using a piece of equipment for a year. The larger the value the greater the energy savings.) for home appliances, which signifies the energy consumption efficiency close to the real-world value, driving the movement towards improved energy savings during steady state operation. Typically, in order to achieve high efficiency operation in devices an efficient power supply is required. In these cases a super-junction MOSFET is used for low current and high-speed switching in the PFC circuit. However, for industrial equipment and the like requiring high-temperature, high-current operation super-junction MOSFETs cannot be used. Instead, less efficient IGBTs are employed.

In response, ROHM adopted a new structure that controls the backside of wafers and takes advantage of super-junction technology, making it possible to maintain the characteristics of super-junction MOSFETs at large currents and under higher temperatures. The result is high performance operation, including high-speed switching and low current characteristics that improve not only the rated region, but expands the applicable range of devices as well. In addition, in high power applications where IGBTs are used for high temperature, high current operation, the advantages of high-speed switching and low-current drive are provided for significantly improving energy savings. Samples will be available in summer 2013.