Renesas Announces New Range of Low-loss Power MOSFETs

Renesas Technology announced a new lineup of 12 10th-generation power MOSFET products. The devices target isolated dc-dc converters used in the power supplies of applications such as servers, communications equipment, and industrial equipment. The new power MOSFETs deliver reduced switching loss for improved energy efficiency and cover a wide voltage tolerance range (40, 60, 80, and 100V).

The 10th-generation fabrication process employed for the 12 new products has a proven track record in earlier power MOSFETs (used mainly in non-isolated dc-dc converters) designed with a focus on on-resistance, and it has been optimized to achieve a gate-drain charge (Qgd) that is up to 50% lower than that of previous Renesas Technology products. The gate-drain charge (Qgd) is a key characteristic in achieving low switching loss in a power MOSFET. In addition, the high-performance package lowers package resistance and improves heat dissipation characteristics, boosting product performance still further and contributing to isolated dc-dc converters with higher efficiency and reduced energy consumption.

To reduce the energy consumption of isolated dc-dc converters, there is demand for power MOSFETs with a lower gate-drain charge (Qgd), a key factor in achieving lower switching loss. The 12 new power MOSFETs are fabricated using Renesas Technology’s 0.18µm 10th-generation process, which has been optimized for this application. For example, the RJK1056DPB with 100V voltage tolerance has a gate-drain charge of 7.5nC, which is approximately half the 14.5nC of Renesas Technology’s earlier HAT2173H.

The input and output voltages of an isolated dc-dc converter are determined by the voltage tolerance of the power MOSFETs used. In terms of the isolated components, an isolated dc-dc converter comprises a primary power supply as the input side and a secondary power supply as the output side. The lineup of new power MOSFETs includes products with a voltage tolerance of 80 and 100V, particularly in demand for the primary side, and products with a voltage tolerance of 40 and 60V, particularly in demand for the secondary side.

The new power MOSFETs proven LFPAK high-performance package. It provides both low package resistance and ’excellent’ heat dispersion characteristics to prevent overheating of the element. In comparison with a conventional SOP-8 or the like, the package itself contributes to the low-loss characteristics of the product. According to the company, internal connections are made directly to a frame, reducing package inductance and ensuring suitability for high-frequency operation.