N-Channel FET Gate Driver for Reverse Battery Protection

Toshiba Corporation's Semiconductor & Storage Products Company today announced the launch of a high-side N-channel power MOSFET gate driver with built-in reverse battery protection functions for use in automotive applications such as idling stop systems. Mass production will start from September 30.

Idling stop systems, which turn off car engines while the car is stopping for traffic lights and traffic jams, are now commonly used in automotive systems as a means to improve fuel efficiency. Using the new gate driver, the TPD7104AF, and an N-channel power MOSFET allows you to form a semiconductor relay for each power supply line to control the power supply between the batteries and the starter generator used in idling stop systems. Also, the new product prevents the flow of electric current into the IC when the power supply is connected to reverse and can control MOSFETs with reverse battery protection.

Key features of the new gate driver include: Built-in charge pump circuit; Built-in protection functions including overcurrent and reverse battery; Built-in diagnostic functions; Small size package: PS-8 (2.8mm x 2.9mm); and Output leak current for reverse connection of power supply: IREV=-1μA(min) (at Tj=-25 degrees C).