Microsemi Announces New POWER MOS 8™ Generation of MOSFETs
Microsemi Corp. has launched the first 15 devices in their newest generation of POWER MOS 8 products. These new MOS 8 MOSFET and FREDFET devices are designed for high power, high performance switch mode applications including power factor correction, server and telecom power systems, solar inverters, arc welding, plasma cutting, battery chargers, medical, semiconductor capital equipment and induction heating. Among the key performance features of these new products are: improved oscillation immunity and reduced EMI; low RDS(on); low gate charge; low switching losses; avalanche energy rated; lower thermal resistance; and FREDFETs are available with fast recovery body diodes.
Microsemi engineers employed advanced design techniques to optimize capacitances and gate resistance. The result is a family of devices with improved oscillation immunity, lower peak slew rates, reduced EMI and high dv/dt ruggedness capability. These features combine to simplify filtering and paralleling of multiple devices in high power applications. In addition, advanced manufacturing processes for the new MOS 8 products have lowered their thermal resistance and enabled higher current ratings for each die size and package type compared to earlier devices. Low capacitance and gate charge specifications enable high switching frequency capability and low switching losses. All MOS 8 devices are 100% tested for avalanche energy capability and are offered only in RoHS compliant packages.
MOS 8 FREDFETs have all of the features and advantages of MOS 8 MOSFETs, with the added benefit of a faster body diode recovery speed of <250ns. These devices provide superior ruggedness and reliability in applications where the body diode carries forward current, such as popular zero voltage switching (ZVS) bridge topologies. First to be released in the POWER MOS 8 family are ten MOSFET and five FREDFET devices with power ratings from 19 to 75A and voltage specifications from 500 to 1200V. Additional power/voltage combinations will be introduced throughout the balance of 2006 and into early 2007. The first Ultrafast Recovery FREDFETs, rated at 500 and 600V, will feature a 150ns recovery time and are scheduled for release in the fourth quarter of 2006. MOS 8 IGBTs with 600 & 900V ratings will follow in early 2007.
MOS 8 technology utilizes a simplified manufacturing process that significantly lowers costs compared to previous Microsemi power MOSFET products. The 1K pricing for part number APT56M50B2 is $7.34. Contact factory direct for additional pricing. All the announced POWER MOS 8 devices are available for immediate sampling.
