IXYS Introduces 20A RF Driver IC for Power MOSFETs

IXYS Corp. announced that its IXYSRF team and wholly owned subsidiary, Directed Energy, Inc., has introduced a new 20A RF MOSFET driver IC for high frequency switching and short power pulses applications. This driver IC is said to solve the problems of delay, lead inductance and false triggering due to noise and feedback, which are typical with high current, high speed gate drivers and applications.

The DEIC421 incorporates Kelvin connections to the driver input and ground pins directly to the IC chip, allowing the use of a common mode choke to prevent unwanted turn-on or turn-off of the driver from ground bounce. The result is very clean operation without oscillations or varying threshold of turn-on or turn-off.

The DEIC421 gate driver is manufactured using IXYS’ proprietary CMOS technology, with what the company describes as a design innovation that improves switching efficiency and reduces noise, while ensuring the highest degree of ruggedness. The DEIC421 expands IXYS driver IC offerings and is in the same low inductance package as the DEIC420 but with an additional input lead for the Kelvin ground connection.