IR Intros New IRF2804 HEXFET Power MOSFET

International Rectifier Corp. (IR, El Segundo, CA) introduced a new automotive-specific, trench HEXFET, power MOSFET technology with 15 percent lower device on-resistance per unit area than the best-competing technology, according to the company. The first product using this new trench technology is the Q101-qualified, 40V IRF2804 MOSFET suitable for high-power automotive applications such as 14V integrated starter alternators, 14V synchronous rectifier alternators, electrical power steering systems, and brush and brushless dc motor controls. The IR trench MOSFET technology will rapidly be extended to the other voltages that can be found in automotive applications with 40V, 55V, 75V and 100V products.

The IRF2804 MOSFET offers an on-resistance of 2.3 milliohm in the TO-220 package and has a low gate charge per unit area, required for high-frequency operation up to 100kHz. The trench MOSFETs also claim to include 10 percent lower on-resistance temperature coefficient than competitive devices, which is particularly important in automotive applications where the nominal operating temperatures usually exceed 125°C and peak junction temperatures may approach 175°C.

Samples of the IRF2804 are available now. Pricing is $3.67 each in 10,000-unit quantities.