IR Intros IRLR7833/IRLR7821 Power MOSFETs

International Rectifier Corp. (IR, El Segundo, CA) introduced the new IRLR7833 and IRLR7821 HEXFET power MOSFETs designed using the latest stripe-trench technology that enables low on-resistance, or RDS(on). The new technology enables the IRLR7833 and IRLR7821 devices to offer up to a 2.5 percent increase in efficiency or alternatively up to a 25-percent reduction in part count compared to competing MOSFETs in dc/dc converters depending on the application needs, according to IR.

The two new MOSFETs are designed for synchronous buck converter circuits in servers, desktops, notebooks and point-of-load converters in networking and communications equipment. The IRLR7833 can also be used for secondary side synchronous rectification for isolated converters. The IRLR7833 offers a 50-percent reduction in RDS(on) and the IRLR7821 exhibits more than a 30-percent reduction in gate charge. With low RDs-on, the IRLR7833 is suitable for synchronous MOSFET applications. The IRLR7821 has low gate charge, making it a suitable control MOSFET. The new devices have a 20V gate rating for improved ruggedness.

The IRLR7821 and the IRLR7833 HEXFET MOSFETs are available now. Pricing begins at $0.38 each for the IRLR7821 and $0.66 each for the IRLR7833 in 10,000-unit quantities.