IR Intros Four New Dual HEXFET Power MOSFETs

International Rectifier Corp. (IR, El Segundo, CA) introduced four dual-HEXFET power MOSFETs that claim to have up to 25 percent lower device on-resistance, or RDS(on), when compared to similar devices. The MOSFETs have been optimized for battery- and load-management applications in portable, battery-operated equipment such as MP3 players, cell phones, digital cameras, notebook computers and other small electronic products.

According to IR, the devices are able to achieve low on-resistance by using the company’s HEXFET MOSFET technology, contributing to better power system efficiency and longer battery life in portable devices. The MOSFETs are housed in a TSSOP-8 package, which is about 35 percent

smaller than the industry-standard SO-8. The company’s silicon technology allows the smaller TSSOP-8 devices to perform as efficiently as many of the larger SO-8-packaged devices.

The 12V p-channel MOSFETs are designed to provide low RDS(on) at gate voltages as low as 1.8V, which is the operating voltage used by many logic ICs in portable electronics. The 1.8V gate rating simplifies circuits, since an additional boost circuit is not required.

Samples and production quantities are available now. The IRF7754 is priced at $0.61 each, and the IRF7755, IRF7756 and IRF7757 are

priced at $0.52 each in 10,000-unit quantities.