IR® Introduces 150V DirectFET® MOSFET for Cooler, More Compact DC-DC Converter Applications
International Rectifier Corp. (IR)® introduced the IRF6643PbF, a 150V DirectFET® MOSFET for isolated dc-dc converters operating from a wide range, 36 to 75V universal telecommunications input and 48V fixed input systems. Combining IR's advanced DirectFET packaging technology and its next-generation HEXFET® power MOSFET silicon, the new DirectFET device achieves a current rating up to 35A while providing superior thermal performance and higher efficiency in a footprint equal to that of a low-profile SO-8 package.
"IR's latest device in our DirectFET line-up minimizes conduction, switching and reverse-recovery losses by continuing to improve the critical parameters that determine the performance of power MOSFETs, RDS(on), Qg and Qgd. These improvements enable operation at higher current levels, while maintaining the smaller form factor of a single MOSFET," said Carl Blake, Director of Technical Marketing for IR's Discrete Products. "Reducing board space by more than 50%, a single DirectFET MOSFET now can take the place of two or three SO-8 packages."
The device's extremely low typical 10V RDS(on) of 29mΩ and low inductance makes it well-suited for high-current synchronous rectifier sockets. Also, with its very low 39 nC Qg and 11 nC Qgd, the IRF6643TRPbF functions well as a primary-side MOSFET in isolated or intermediate dc bus converters. The IRF6643TRPbF is packaged in the medium-sized (MZ) DirectFET package.
The IRF6643TRPbF DirectFET MOSFET is available immediately. Pricing is US $1.24 each in 10,000-unit quantities.
