New Industry Products

IR Debuts IRFS38N20D and IRFS52N15D MOSFETs

July 10, 2002 by Jeff Shepard

International Rectifier Corp. (IR, El Segundo, CA) introduced a new series of 150V and 200V HEXFET® power MOSFETs that increase efficiency by up to one percent in 48V, input-isolated, dc/dc converters for networking and telecommunications systems. The new MOSFETs have lower device on-resistance and gate charge characteristics than previous-generation devices.

The new 200V IRFS38N20D and 150V IRFS52N15D MOSFETs deliver up to 20 percent higher current-carrying capability than the closest competing devices in a TO-220 package, according to IR. The new devices are also available in the D2Pak and TO-262 packages. The new HEXFET MOSFETs are suitable for primary-side sockets in single-output, board-mounted, power modules or in multiple-output power supplies. The new devices can also be used in hot-swap circuits and active OR-ing circuits, ensuring reliable system operation.

In a typical 150W half-brick module, the new IRFS38N20D delivers 91.5 percent efficiency at 5Vout and 30A load, one percent higher than the industry-standard device. The new IR device also runs 28 degrees C cooler than the competing device.

The new devices are available immediately. Pricing begins at $1.10 each for the IRFS38N20D and the IRFS52N15D in the D2Pak in 10,000-unit quantities.