International Rectifier Launches New Automotive HEXFET Power MOSFETs
International Rectifier (IR, El Segundo, CA) announced the extension of its line of low-voltage HEXFET power MOSFETs targeted at automotive applications. The new automotive devices achieve best-in-class efficiency (low on-resistance) and ruggedness (high avalanche), parameters that have traditionally been traded off against one another. The avalanche capability of these devices is twice that of previous technology from IR.
Additional benefits are provided by combining new silicon technology with the latest packaging innovations. IR's packages allow more silicon to be put in the same package footprint, resulting in a correspondingly lower Rds(on) value and a better thermal path.
Gordon Gray, technical marketing manager for the Automotive Group at IR claims, "The benefit of IR's 'super package' is evident, especially at low-silicon Rds(on) values where the package itself can be the limiting factor in device performance. The new devices have been optimized specifically for under-the-hood applications. The 40V devices are made for EPS and the 75V devices for ISA. Additionally, 55V devices have been developed for ABS, allowing the designer to use smaller-die devices in the circuit."
Samples of the new automotive HEXFET power MOSFETs are available immediately. Pricing in 10,000-piece quantities varies between $0.79 to $3.90 each.
