New Industry Products

International Rectifier Introduces New N-Channel MOSFET Driver IC

February 20, 2000 by Jeff Shepard

International Rectifier (El Segundo, CA) recently introduced what they claim is the space industry's first radiation-hardened, high-frequency 400V, high- and low-side N-channel MOSFET driver integrated circuit. Designated the RIC7113, the new device is a functional, pin-to-pin replacement for the industry-standard IR2110 driver family.

According to the company, the RIC7113 offers a new performance standard for space power-management applications. The 400V, high-side drive capability of the RIC7113 offers power-supply designers the ability to utilize power-supply topologies that require a floating high-side switch. Typical configurations include two transistor forward, half-bridge and full-bridge configurations.

The RIC7113 was designed to provide reliable performance in harsh radiation environments encountered in space-level applications. According to the company, the RIC7113 can withstand a total dose exposure of 100K Rad(Si) without any performance degradation. The RIC7113 is a high-voltage, high-speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels.

Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high-pulse-current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration operating up to 400V. The RIC7113 will be available in both a 14-pin dual in-line ceramic (MO-036AB) package, and an 18-pin LCC surface-mount package. Evaluation samples are currently available.