Integrate Gallium Nitride and Silicon for Faster Higher Efficiency Devices
Integrated Device Technology announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride
Integrated Device Technology announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency. Under their collaboration, the companies will explore integrating EPC’s eGaN® technology with leading IDT solutions.
The three areas in which the companies are collaborating: Communications and computing infrastructure—GaN’s low capacitance and zero QRR coupled with the low inductance of its chip-scale package result in high efficiency at high frequency. This increase in efficiency will combine with IDT’s precise commutation and system expertise to drive up power density and deliver significant competitive advantage to communications and computing infrastructures. Wireless power – The highly resonant wireless power transfer standard of the Alliance for Wireless Power (A4WP) consortium protocol operates at 6.78 MHz, where the high speed, low-loss switching ability of GaN drives efficiency to the levels of wired solutions. Combining the GaN expertise of EPC and precision solutions of IDT will deliver a highly efficient, cost competitive solution that will drive widespread adoption of wireless power.
Radio frequency (RF) – The two companies will explore collaboration to create a portfolio of RF products for the communications infrastructure market.