General Semiconductor Introduces New UG8JT and UG8JCT Rectifiers

General Semiconductor Inc. (Melville, NY) has introduced a new series of ultra-fast rectifiers that includes the UG8JT and UG8JCT. These rectifiers have been optimized to reduce switching losses for use in power-factor correction circuits for switching power supplies. The new rectifiers utilize General Semiconductor's proprietary gold-diffusion process. The company claims that this results in softer recovery waveforms and improved high-temperature switching performance.

The softer recovery waveform, in turn, reduces EMI noise in high-frequency applications. Gold doping also minimizes the temperature sensitivity of the reverse-recovery time. General Semiconductor also claims that the new products have a very fast reverse-recovery time, as low as 25ns. The low forward-voltage drop minimizes forward conduction losses. Meanwhile, the devices are also claimed to have superior reverse energy handling capability and reliability, due to a proprietary process that uses a graded epitaxial layer and an improved glass-passivation process.

The single diode UG8JT and dual center-tapped UG8JCT have a forward current rating of 8A and a reverse-voltage rating of 600V. Other current ratings will be offered in the future. These devices are offered in TO-220 packaging and cost $0.94 cents each in 25,000-piece quantities.