GaN Specialist Exagan Opens Power Solutions Center in Europe to Bring Electronics Manufacturers GaNs Performance over a Wide Range of Applications
This article highlights Exagan exhibiting its versatile GaN-based product portfolio at this week’s PCIM Europe conference in Germany.
Semiconductor company is showcasing its GaN intelligent solutions in several end products at PCIM Europe this week
Grenoble, France – May 7, 2019 – Continuing its progress in accelerating the adoption of gallium-nitride (GaN)-on-silicon semiconductors in power markets, leading GaN innovator Exagan has opened a new Power Solutions Center in Toulouse, France, to extend its applications support and market reach in wide-ranging, customer-specific end products. The opening of the best-in-class facility, which is operating in close collaboration with technology partner CEA Tech, follows the launch of Exagan’s first GaN applications center in
The Toulouse facility provides customers with new application-development and product-validation capabilities using highly specialized electronic equipment. It also enables Exagan to master new architectures for GaN solutions while also boosting power-conversion efficiencies in current topologies.
Exagan is exhibiting its versatile GaN-based product portfolio at this week’s PCIM Europe conference in Germany. The company is showcasing the performance of its G-FET™ power transistors in applications such as 65-watt USB PD 3.0 power chargers and power factor correction (PFC) ranging from 300 watts up to 1.5 kilowatts for next-generation data centers.
Exagan’s technology and products are designed to offer customers the best value in device performance, robustness and ease of integration with existing platforms. G-FET power transistors can be fabricated in existing 200-mm CMOS wafer fabs, enabling a multi-source supply, easy scalability and optimal cost/performance benefits.
With its fab-lite business model, Exagan offers complete control of GaN technology integration from starting materials to full implementation in end products, enabling product optimization and volume manufacturing. The company’s product portfolio covers a wide range of power levels and applications, from small fast-charging systems, data centers and onboard automotive chargers up to fast-charging stations for electric vehicles.
“Building on a robust GaN technology and product portfolio, Exagan is now deploying GaN Power Solutions Centers in Europe and Asia to work closely with customers. Our goal is to deliver the best functionality and value by optimizing GaN devices’ industry-leading balance of power density, power efficiency, reliability and system costs,” said Frédéric Dupont, president and CEO of Exagan.
The market for GaN in power electronics is projected to increase at a compound annual growth rate (CAGR) of 93 percent by 2023, according to Yole Développement.
Visit Exagan’s exhibit at PCIM Europe in booth #637, Hall 9 to see the company’s G-FET power transistors, G-DRIVE™ intelligent system-in-a-package (SiP) solutions and evaluation modules.
Exagan was co-founded by Frédéric Dupont and Fabrice Letertre to accelerate mass-market adoption of gallium-nitride (GaN)-based power devices. Armed with a decade of R&D experience from working with GaN technology at Soitec, a global leader in advanced materials, and convinced that this material would be a key in enabling superior power-conversion efficiency, they drew upon existing GaN technology to develop Exagan’s intelligent power solutions.
Backed by Soitec and CEA-Leti, a leading European research center focused on micro- and nanotechnologies, the founders launched Exagan as a spin-off company in April 2014.