Fairchild Semi Launches the FDB06AN08A1 MOSFETMay 16, 1999 by Jeff Shepard
Fairchild Semiconductor (San Jose, CA) launched the new FDB06AN08A1 75V ULTRAFET trench MOSFET, designed for high-current starter/alternator, electronic power steering, electric braking, valve timing and other 42V automotive battery applications requiring full device capability at low gate drive voltages.
The FDB06AN08A1 n-channel trench MOSFET features an Rds(on) of 6.3 milliohms maximum, at room temperature. It has a 75V breakdown voltage, a 175 degrees C maximum junction temperature, and an internal gate resistor. In addition, the device features unclamped inductive surge capability for single and repetitive pulses.
The FDB06AN08A1 is available for sampling now. Production volumes will be available in July, 2001, priced at $3.20 each in 1,000-piece quantities.