New Industry Products

Fairchild Introduces N-Channel MOSFET Series for Notebook & Portable Battery Pack Protection Designs

August 19, 2007 by Jeff Shepard

Fairchild Semiconductor introduced a new series of high-efficiency N-channel MOSFETs that boast up to 8kV ESD (HBM) voltage protection – which the company claims is 90% higher than existing devices on the market. The FDS881XNZ series support the latest architectures for battery pack protection applications such as notebook and cell phones.

Utilizing Fairchild’s Power Trench® process, these low-RDS(ON) MOSFETs, including the FDS8812NZ with RDS(ON) of less than 5m&Omega, are said to reduce conduction losses and extend valuable battery life. They also provide rugged and robust avalanche and high peak current capability to ensure system safety by surviving unexpected voltage spikes that may afflict battery packs.

The FDS881XNZ series offers design engineers a variety of options that they can select depending on their battery application’s power management and load switching requirements. The FDS8812NZ (RDS(ON) = 4 mΩ) targets high-end laptops by addressing the thermal challenges resulting from incorporating high levels of functionality into notebook computers. The FDS8813NZ (RDS(ON) = 4.5mΩ) is best suited for all-in-one laptops featuring displays over 15", while the FDS8817NZ (RDS(ON) = 7mΩ) is suitable for general use in low- to mid-tier models, as well as sub-notebook PCs.

The FDS881XNZ series of N-channel MOSFETs are available in an industry-standard SO8 package. The FDS881x series utilizes lead-free (Pb-free) terminals and has been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. All Fairchild products are designed to meet the requirements of the European Union Directive on the restriction of the use of certain substances (RoHS). Samples are available now, with a 12week ARO.