Diodes Inc. Introduces New Rectifiers in Compact Power Package

Diodes Inc. announced the launch of the SBR® product family packaged in Diodes’ proprietary high performance PowerDI™123. The 3A SBR® rectifier product family offers Ultra-Low Vf for high efficiency combined with high temperature thermal stability, robust ESD ratings of +/- 16kV HBM, and much higher reverse avalanche capability compared to traditional Schottky technology. They are targeted for use in applications like disk drives, high temperature automotive applications, dc-dc converters, and in small portable electronics, such as mobile phones, digital audio players and digital cameras.

"The introduction of the SBR® PowerDI™123 product family is a solid example of the synergies between our recently acquired SBR® patented wafer technology and Diodes’ proprietary high performance packaging," commented Dr. Keh-Shew Lu, President and CEO of Diodes. "The technological milestones achieved in our first of many planned SBR® product introductions represent performance unobtainable with traditional Schottky technology."

Combined with PowerDI™123’s patented flat lead frame package, the 3A SBR® product family combines both highly efficient wafer technology with a high performance power dissipation package. The SBR3U30P1 SBR® device is the first of its family to combine both ultra-low Vf and a high maximum junction temperature rating of 150°C. This combination results in device parameters that are far superior to standard Schottky technology and are particularly well suited to the efficiency and thermal requirements of compact 1/8th brick and 1/16th brick dc-dc converters.

Diodes is currently releasing six SBR® diodes in the PowerDI™123 package platform. The new SBR3U30P1 SBR® device achieves a continuous forward current rating of 3A with an ultra-low forward voltage drop (Vf), and a high maximum junction temperature of 150°C. The SBR3M30P1 with its even higher maximum junction temperature of 175°C is well suited for high temperature applications, such as solar panels and under-hood automotive environments where efficiency and reliability are critical to the design. In addition to the 3A devices, the SBR® PowerDI™123 family includes a 2A ultra-low Vf version, SBR2U30P1; a 2A ultra-low leakage version, SBR2M30P1; and 30V/40V low Vf versions, SBR2A30P1 and SBR2A40P1.

Diodes also introduced the SBR® technology in large power packages, including the TO-220 and ITO-220. Specifically targeting power supply end products and flat panel displays, the first part numbers to be released are the SBR20U100CT and SBR20U100CTFP rectifiers in TO-220 and ITO-220 packages. The SBR20U100CT product family offers lowest Vf with a high maximum junction temperature of 175°C and a much higher avalanche rating than standard traditional Schottky rectifiers.