AnalogicTech Intros AAT7357 P-Channel Power MOSFET

Advanced Analogic Technologies Inc. (AnalogicTech, Sunnyvale, CA), a developer of power management solutions, announced the AAT7357, a 20 V low-threshold, dual P-channel power MOSFET for battery-powered portable applications. Using AnalogicTech’s proprietary, ultra-high-density TrenchDMOS process, the AAT7357 offers low on-resistance in a compact 3 mm x 2.85 mm TSOPJW-8 package.

The AAT7357 delivers a drain-source on-resistance of 30 mOhms (typical) at a gate-threshold voltage (VGS) of –4.5 V. The RDS(ON) is 49 mOhms at a VGS of –2.5 V. Maximum power dissipation is 1.6 W at 25 °C. Continuous drain current is 5 A at 25 °C and drain-to-source breakdown voltage is –20 V.

Samples and production quantities of the AAT7357 are available now. The device comes in the 3 mm x 2.85 mm TSOPJW-8 package, and sells for $0.68 in 1,000-unit quantities.