850V FETs Claim Industry’s Lowest On-Resistance
IXYS Corporation introduced a new power semiconductor product line, the 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes. With current ratings up to 110A, these rugged devices enable a very high power density in high voltage power conversion applications. These new 850V devices claiim the lowest on-state resistances in the industry (33 milliohms in the SOT-227 package and 41 milliohms in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Their avalanche capability enhances their ruggedness, preventing device failure induced by voltage transients and accidental turn-on of parasitic bipolar transistors. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and EMI.
Well-suited applications include such high-efficiency, high power density applications as switched mode and resonant mode power supplies, ac and dc motor drives, dc-dc converters, robotic and servo control, electric vehicle battery chargers, renewable energy inverters, and power factor correction circuits.
The new 850V X-Class Power MOSFETs with HiPerFETâ„¢ body diodes are available in the following international standard size packages: TO-220, TO-263HV, SOT-227, TO-247, TO-264, PLUS264 and TO-268HV. Some example part numbers include IXFH20N85X, IXFK50N85X, IXFB90N85X and IXFN110N85X, with current ratings of 20A, 50A, 90A, and 110A, respectively.
