800V 12A UltraMOS MOSFETs

Central Semiconductor introduces its newest energy-efficient, high-voltage UltraMOS™ MOSFET designed to minimize total conduction losses while maximizing power density. The CDM22012-800LRFP is a 12A, 800V MOSFET in the TO-220FP package. The low RDS(on) of 0.37Ω and low total gate charge of 7.6nC are key energy efficiency characteristics of this UltraMOS™ device, which surpass the operational performance of similarly rated standard MOSFETs.

Key specifications include: Low gate charge (Qgs =7.6nC), typical; Crss = 9.5pf (typical at 100V Vds); Ciss = 1,090pf (typical at 100V Vds); Coss = 55.2pf (typical at 100V Vds);maximum pulsed drain current of 48A for 10 microseconds; continuous drain current of 7.7A at Tc = 100 degrees C steady state; and a power rating of 40W continuous between 0 and 25 degrees C (case temperature), derating linearly to zero at 150 degrees C (case temperature).

The 800V UltraMOS™ MOSFETs are designed for power supplies, power inverters and the perfect pairing with Central’s HyperFast rectifiers, to provide a superior high speed operational benefit for phase shift compensation in power factor correction applications.

Pricing for the CDM22012-800LRFP is $1.90 each for 1,000 pieces packed in sleeves or supplied bulk and available from Digi-Key and Future Electronics. Sample devices are available upon request direct from Central Semiconductor. A 6A, 800V device is also planned for release later this year.