650V SiC FETs Offer Same Voltage Drop-in ReplacementMay 08, 2019 by Scott McMahan
UnitedSiC has added seven new TO220-3L and D2PAK-3L device/package combinations to its UJ3C (general purpose) and UF3C (hard switched) series of 650V SiC FETs. These new FETs offer new levels of high-voltage power performance in fast-growing markets including data center servers, 5G base stations, and electric vehicles. In these markets, the SiC FETs will be used in power supplies, telecom rectifiers, and on-board chargers respectively.
Typical applications for the SiC FETs include EV charging, PV inverters, switch mode power supplies, power factor correction modules, motor drives, and induction heating.
According to the company, this series exhibits ultra-low gate charge, but also has the best reverse recovery characteristics of any device of similar ratings. These devices are outstanding for switching inductive loads, and any application requiring a standard gate drive.
The new devices offer a 3-lead, TO220 or D2PAK package option that enhances power performance in power-factor correction circuits, and phase-shifted full-bridge converters, and LLC resonant converters.
According to the company, the UJ3C and UF3C FET portfolio provide a true "drop-in replacement" that can significantly enhance system performance, without the need to change gate drive voltage. The SiC FETs can directly replace existing Si IGBTs, Si FETs, SiC MOSFETs or Si super-junction devices with the UnitedSiC FETs.
Both series of SiC FETs are based on UnitedSiC's unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET. Combined they form a normally-off SiC FET device that has standard gate-drive characteristics.
As a result, existing systems upgraded with the UnitedSiC "drop-in replacement" FETs can anticipate a performance increase with enhanced thermal properties, integrated ESD protection, and lower conduction and switching losses.
In the case of new designs, the UnitedSiC FETs deliver increased switching frequencies to gain substantial system benefits in both efficiency and reduction in size, and costs of passive components, such as magnetics and capacitors.
The three-leaded, industry-standard TO220-3L package delivers enhanced thermal characteristics made possible with UnitedSiC's sintered-silver packaging technology.
New products available in this package include the UJ3C device with RDS(on) values of 30m and 80mohms, and the UF3C device with an RDS(on) spec of 40m.
The three-leaded, industry-standard D2PAK-3L is intended for surface mount designs and is certified to IPC and JEDEC's Moisture Sensitivity Level 1. New products available in this package include the UF3C devices with RDS(on) specs of 30mΩ and 40mΩ and the UJ3C device with RDS(on) specs of 30mΩ and 80mΩ.
Select devices are also available in automotive versions that meet AEC-Q101.
Price and availability
Dependent upon RDS(on) values, prices range from $5.18 to $13.79 each for the TO220-3L and from $5.18 to $14.35 each for the D2PAK-3L options at 1,000 pcs quantities. Devices are in stock at UnitedSiC franchised distributors, including Mouser and Richardson Electronics.
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2