45V 1.15mOhm MOSFET with Robust UIS Capability

Alpha and Omega Semiconductor Limited (AOS) today introduced the first single n-channel 45V MOSFET with an ultra-low on-resistance of 1.15mOhms at 10V. The AON6152 claims the best combination of maximum power conversion efficiency and higher driver capability to minimize switching power loss. This latest addition to AOS's medium-voltage product portfolio is designed to address a wide range of applications including secondary-side synchronous rectification in ac-dc and dc-dc converters, as well as industrial and motor drive applications.

Using AOS's leading process technology, the AON6152 is able to generate extremely low on-resistance when working as the secondary-side synchronous rectifier, significantly reducing power dissipation and maximizing conversion efficiency. With a drain-source break-down voltage (BVDSS) rating at 45V and a super low on-resistance of 1.15mohm, the AON6152 provides a design-friendly feature that gives design engineers an optimized solution to get the highest efficiency and at the same time get better voltage headroom for a more reliable design. The AON6152 is available in a compact DFN5x6 power package, and is 100% Rg and UIS tested.

"AON6152 sets the stage for a new generation of products that can help simplify designs for more efficient, thermal, and higher power density performance. This new device will allow power designers to create solutions that run cooler and improve overall system reliability," said Lei Feng, Marketing Director of MOSFET product line at AOS.

The AON6152 is immediately available in production quantities with a lead-time of 12-14 weeks. The unit price for 1,000 pieces is $1.15.