40V MOSFET with Shield-Gate Tech and New DFN 5X6 Package
Alpha and Omega Semiconductor Limited introduced the "Source Down" in a DFN 5x6 package in combination with a 40V Shield-Gate Technology (AlphaSGT™) MOSFET. AOS' flip-chip know-how achieves the Source Down capability and the packaging technology features a very low package resistance and inductance.
The AOE66410 is suited for synchronous rectification (SR) in telecommunications, half-bridge configuration of BLDC motors, and battery management where paralleling is essential. Other typical applications include chargers and synchronous rectification in dc-dc and ac-dc converters.
The AOE66410 (40V) features the same form factor as a standard DFN 5x6 package, but the source pad has the largest connection to the PCB. This connection will enable easier paralleling of devices and provides a larger thermal area to dissipate any losses. The AOE66410 has a 1mΩ max at 10Vgs with a maximum drain current of 100A at 25°C case temperature.
Related: Single-Chip Triple Half-Bridge Gate Drivers Sink 350mA and Source 200mA
"Source Down can offer a significant improvement in PCB layout and simplify new parallel designs, which are suited for high-power telecommunication power supplies," said Peter H. Wilson, Marketing Director of the MOSFET product line at AOS.
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Features
- Thermal-enhanced XSFET package
- Trench Power AlphaSGT™ technology
- Low RDS(on)
- Low Gate Charge
- Optimized for Common Ground of Secondary-Side Synchronous Rectifier
- RoHS and Halogen-Free Compliant
Pricing and Availability
The AOE66410 is available immediately in production quantities with a lead time of 12-14 weeks at a unit price for 1,000 pieces of $1.95.
