3.3kV to 6.5kV IGBT Module Platform for Compact Inverters
Infineon Technologies AG has extended its portfolio of high voltage devices with a new IGBT module platform for high-power applications, the XHP™ 3. This platform is for high-power applications in the voltage range from 3.3kV up to 6.5kV. The company says that the module offers best-in-class reliability and highest power density. (See the XHP 3 on the right above next to the soon-to-be-released XHP 2).
Its low stray inductance and symmetrical design give the platform significantly improved switching behavior. For this reason, the XHP 3 platform provides a solution for demanding applications such as traction and commercial, construction and agricultural vehicles as well as medium-voltage drives.
Infineon will showcase the XHP 3 high-power platform at PCIM Europe 2019.
Infineon's XHP 3 package measures 140mm in length, 100mm in width and 40mm in height. The first IGBT modules of this new high-power platform feature a half bridge topology with a blocking voltage of 3.3kV and a nominal current of 450A.
XHP 3 IGBT package
In order to meet customers' demands, the company launched two different isolation classes simultaneously; 6kV (FF450R33T3E3) and 10.4kV (FF450R33T3E3_B5) isolation, respectively. Ultrasonically welded terminals, an aluminum silicon carbide baseplate, and aluminum nitride substrates ensure the highest level of reliability and robustness.
The high-power IGBT module is designed for paralleling and, therefore, offers a new level of scalability. The IGBT is easily adaptable to the desired power level by paralleling the required number of XHP 3 modules.
The company offers pre-grouped devices to facilitate scaling. These devices feature a matched set of static and dynamic parameters. With these grouped modules, de-rating is no longer required when paralleling up to eight XHP 3 devices.
Features of XHP 3 IGBT Platform
- Designed for applications with 3.3kV or 6.5kV
- Half-bridge configuration for best performance
- Modular approach and wide scalability with high current density
- Optimal arrangement of main and auxiliary terminals
- Available with 6kV and 10.4kV isolation, respectively
- High DC stability
- High short-circuit capability
- Low switching losses
- Low Vcesat
- Unbeatable robustness
- Tvjop =150°C
- Vcesat with positive temperature coefficient
- AlSiC base plate for increased thermal cycling capability
- Package with CTI > 600
- Isolated base plate
- One, high-power platform offering flexibility and scalability
- High power density and optimized frame sizes
- High reliability and long service life
- Reduced system cost
- Low inductance
The XHP 3, 3.3kV IGBT modules can be ordered now.
Infineon at the PCIM 2019
At the PCIM 2019 tradeshow, Infineon is showcasing innovative product-to-system solutions for applications that are ready to power the world and shape the future. Infineon will present its demos at booth #313 in hall 9 (Nuremberg, Germany, 7-9 May 2019).