EEPower

100V BoostPak Provides Improved Reliability, Reduces System Costs in LED Applications


New Products Jun 02, 2013 by Jeff Shepard

Fairchild Semiconductor optimizes the MOSFET and diode selection process by introducing a family of 100 V BoostPak devices that combines a MOSFET and diode in one package to replace discrete solutions currently used in LED TV / monitor backlight, LED lighting and DC-DC converter applications. By integrating the MOSFET and diode into a single package, the FDD1600N10ALZD and FDD850N10LD devices save board space, simplify assembly, lower bill of material (BOM) costs and improve reliability of the application.

The devices feature an N-channel MOSFET produced using Fairchild’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is a hyperfast rectifier with low forward voltage drop and excellent switching performance. It has much lower leakage current than a Shottky diode, which improves system reliability in high temperature applications.

Key features for the FDD1600N10ALZD include: RDS(ON) = 124 mΩ (Typ.)@ VGS = 10 V, ID = 3.4 A; RDS(ON) = 175 mΩ (Typ.)@ VGS = 5 V, ID = 2.1 A; Low Gate Charge = 2.78 nC (Typ.); and Low Crss = 2.04 pF (Typ.). Key features for the FDD850N10LD include: RDS(ON) = 61 mΩ (Typ.)@ VGS = 10 V, ID = 12 A; RDS(ON) = 64 mΩ (Typ.)@ VGS = 5.0 V, ID = 12 A; Low Gate Charge = 22.2 nC (Typ.); and Low Crss = 42 pF (Typ.). Both parts offer fast switching, 100% avalanche testing, improved dv/dt capability and RoHS compliance. Prices in 1,000 quantity pieces are: FDD1600N10ALZD, US$0.49; and FDD850N10LD, US$0.57.