Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors…
Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors…
Power Integrations announces the release of its BridgeSwitch™ integrated half-bridge (IHB) motor driver IC family.
Power Integrations announces the release of its BridgeSwitch™ integrated half-bridge (IHB) motor driver IC family.
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a…
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package.
This article highlights KEMET Multi-Layer Ceramic Chip Capacitors rated for operation up to 200°C, featuring C0G…
This article highlights KEMET Multi-Layer Ceramic Chip Capacitors rated for operation up to 200°C, featuring C0G dielectric and nickel…
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