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Low-Power HART CMOS Modem IC for Industrial Communications

Low-Power HART CMOS Modem IC for Industrial Communications

Flexible Single-Stage Digital LED Driver IC Platform

Flexible Single-Stage Digital LED Driver IC Platform

650V and 100V GaN Transistors Announced

650V and 100V GaN Transistors Announced

IEEE PELS Webinar on Power GaN on 4 June

IEEE PELS Webinar on Power GaN on 4 June


News May 22, 2014 by Jeff Shepard
PV Wafer Maker SunEdison Announces $90Million IPO

PV Wafer Maker SunEdison Announces $90Million IPO


News May 22, 2014 by Jeff Shepard
Wafer-Level Testing for  High-Current and High-Voltage GaN and SiC

Wafer-Level Testing for High-Current and High-Voltage GaN and SiC

HY-LINE now offering Transphorm 600V GaN Devices in Europe

HY-LINE now offering Transphorm 600V GaN Devices in Europe


News May 20, 2014 by Jeff Shepard
Major GaN Developments at PCIM

Major GaN Developments at PCIM

ChiP-based DCM Converter Modules Deliver up to 1244 W/in3

ChiP-based DCM Converter Modules Deliver up to 1244 W/in3

Backup Power Controller and Supercap Charger/Monitor IC

Backup Power Controller and Supercap Charger/Monitor IC

Furukawa Electric Licenses GaN Patents to Transphorm and Makes Investment

Furukawa Electric Licenses GaN Patents to Transphorm and Makes Investment


News May 13, 2014 by Jeff Shepard
GaN Systems will tell “Why GaN Devices will replace Si IGBTs” at PCIM

GaN Systems will tell “Why GaN Devices will replace Si IGBTs” at PCIM

SiC Wafer Grading Structure proposed by Dow Corning

SiC Wafer Grading Structure proposed by Dow Corning

EPC to Present Multiple Papers on GaN Technology at PCIM 2014

EPC to Present Multiple Papers on GaN Technology at PCIM 2014

RCD Claims the Widest Range of Thin-Film Chip Resistors

RCD Claims the Widest Range of Thin-Film Chip Resistors

Dual Output Differential Speed and Direction Sensor IC

Dual Output Differential Speed and Direction Sensor IC

Podcast Series on GaN Power Transistors for Power Designers

Podcast Series on GaN Power Transistors for Power Designers

GaN Development Board for High-Current, High Step-Down IBCs

GaN Development Board for High-Current, High Step-Down IBCs


News Apr 17, 2014 by Jeff Shepard
ChiP-based BCMs provide Power Density of 2,750 W/in3 with PMBus

ChiP-based BCMs provide Power Density of 2,750 W/in3 with PMBus

Ultra-High-Precision Chip Resistors Tested per EEE-INST-002 and MIL-PRF-55342

Ultra-High-Precision Chip Resistors Tested per EEE-INST-002 and MIL-PRF-55342