Transphorm and ON Semiconductor Co-Branding GaN Power Devices
Transphorm Inc. today announced at APEC 2015, in partnership with ON Semiconductor, the introduction of two co-branded 600V GaN cascode transistors and a 240W reference design that utilizes them. This introduction builds on the previously announced partnership between Transphorm Inc., Transphorm Japan Inc., and ON Semiconductor to bring GaN-based power solutions to market. With typical on-resistances of 150 and 290 mOhms, the two new GaN products, TPH3202PS (ON Semi equivalent: NTP8G202N) and TPH3206PS (ON Semi equivalent: NTP8G206N), are offered in an optimized TO-220 package for easy integration with customers' existing circuit board manufacturing capabilities.
â€œAt last yearâ€™s APEC 2014, the Transphorm booth displayed evaluation boards using our 600V TO-220 HEMTs. At this yearâ€™s show weâ€™re excited to announce complete GaN-specific reference designs with ON Semiconductor,â€ said Primit Parikh, President and Co-Founder of Transphorm. â€œWe have consistently demonstrated, since 2011, that our JEDEC-qualified 600V GaN products enable more efficient, compact and low-cost solutions than traditional silicon devices. With our partner, ON Semiconductor, we are providing complete reference design platforms and tools that enable designers to take advantage of GaNâ€™s benefits while greatly accelerating their design cycles and reduce time to market.â€
The two-stage evaluation board NCP1397GANGEVB (Transphorm equivalent: TDPS250E2D2) is offered as a complete reference design so that customers can implement GaN cascode transistors in their power designs. The evaluation board is representative of a production power supply that has been re-designed for smaller size and higher performance systems, and it highlights the capability and potential of GaN transistors in this power range. The boost stage delivers 98% efficiency and utilizes the NCP1654 power factor correction controller. The LLC dc-dc stage uses the NCP1397 resonant mode controller to offer a 97% full load efficiency. This performance is achieved while running at 200+ kHz and - impressively - is also able to meet EN55022 Class B EMC performance. Full documentation is available at the Transphorm and ON Semiconductor websites.
The Transphorm GaN HEMT devices are in mass production at the Fujitsu Semiconductor groupâ€™s CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan. The large-scale, automotive-qualified facility, which is providing exclusive GaN foundry services for Transphorm and its partners, will allow dramatic expansion of Transphormâ€™s GaN power device business to meet the growing customer demand.