TranSiC AB, developer of power transistors in the wide bandgap material Silicon Carbide, announced that it has raised SEK 24 million ($4 million, €2,6 million) venture capital in a second financing round with Industrifonden, Volvo Technology Transfer and Midroc New Technology.
"This investment will enable us to go from prototyping and sampling power components to our customers to qualify components and our manufacturing processes. We are also planning to use part of the funding to support more sales and marketing activities." according to Bo Hammarlund, VP of Sales & Marketing and one of the founders.
TranSiC develops and manufactures power bipolar junction transistors (BJTs) in Silicon Carbide, under the trademark BitSiC®. The 20A and 6A components are available for 1200V in various packages and as integrated power modules. It is claimed that key advantages of the BitSiC are higher current gains and faster switching compared to silicon power bipolar junction transistors. In addition, the BitSiC chip is said to operate well at temperatures exceeding 250°C, and this opens up for new applications after development of a suitable package technology.
Development and device fabrication is performed in the Electrum Laboratory in Kista, Sweden, where a four inch line suited to SiC device technology is available. TranSiC claims that it also has access to excellent device characterization facilities and to testing in applications through cooperation with pilot customers.
"TranSiC is the only manufacturer world wide which ships Silicon Carbide BJT power transistors for the Hybrid Electrical Vehicle industry. TranSiC is way ahead of competitors which is very promising for the future.", stated Stefan Jakelius, Investment Manager at Industrifonden.
