Toshiba America Electronic Components Inc. (TAEC, Japan and Irvine, CA) announced that many of its extensive line of power semiconductor package types will be manufactured using either lead-free packaging or lead-free finishes. To accommodate customers that are not making the transition to lead-free manufacturing, the company will continue to offer power semiconductor components in the original package finish.
Developed by Toshiba Corp. (Japan), the diverse line of power devices feature high-power IGBT modules and press packs, plus a comprehensive line of medium-power devices that include MOSFETs, bipolar transistors, Schottky barrier diodes, intelligent power modules, thyristors and triacs, and rectifiers. The high-power devices are optimized for industrial control applications, while the medium-power devices are targeted for use in portable applications.
Toshiba’s lead-free power devices are available with tin-silver or tin-copper lead-free plating that meet or exceed the requirements of the joint IPC/JEDEC standard J-STD-020B. The packaging is also compliant with European Union requirements, which take effect in 2005.