MagnaChip Semiconductor Corp. announced that it now offers a new premium 0.18-micron Bipolar-CMOS-DMOS (BCD) high voltage process. This new process features operability at 60V and will support additional voltage ranges (12V~60V) for applications that include dc-dc converters, Power-over-Ethernet, LED drivers, audio amps and PMICs for the mobile and consumer markets.
This new BCD process is fully compatible with standard CMOS processes and uses high density logic devices (1.8V) and performance analog devices (5V) with low flicker noise. MagnaChip is also developing 80V LDMOS devices featuring expanded operating ranges with completion expected by August, 2012.
Utilizing MagnaChip’s proprietary deep-trench isolation technology and high voltage LDMOS device optimization, this new premium 0.18um BCD process will enable high reliability and chip size reduction while improving isolation and low Rsp (specific on resistance) for foundry customers. To enhance design flexibility and cost competitiveness, this process will also support non-volatile memory (NVM), high K metal-insulator-metal capacitor, copper wire bonding, thick top metal, and redistribution layer process options.
"We are very pleased to offer our new 0.18um BCD high voltage process solution that enhances product performance over a wide range of voltages," said Namkyu Park, Vice President of MagnaChip’s Foundry Marketing. "To meet the ever increasing technical requirements of foundry customers, our goal is to continue to enhance our process technology and expand our BCD portfolio."
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