Jazz Semi Announces Enhancements To High Voltage BCD Power Platform

March 04, 2008 by Jeff Shepard

Jazz Semiconductor announced enhancements to its advanced Bipolar CMOS DMOS (BCD) process platform including the addition of an ultra low Rdson scalable NLDMOS device. This Rdson reduction is said to enable up to a 50% shrink in die size in most power devices. In addition, Jazz claims that it has leveraged its RF modeling expertise to offer leading-edge power modeling which allows IC designers to confidently design large drivers required in high speed switching applications.

Jazz offers a full line of high voltage BCD process technologies, ranging from 0.5 to 0.18µ, providing what is described as a complete array of solutions from linear regulators to the most advanced digital control Point of Load (POL) regulators. The BCD process platform offers a solution for power management IC designers and is well-suited for low leakage power requirements. The feature set of these process technologies includes: 5V CMOS, a 1KΩ poly resistor, MIM capacitors, and a broad voltage range of LDMOS transistors designed to operate at 12 or 20 to 40V with ultra low Rdson at all voltage levels. Additional features include: VIA stacking, thick top power metal (3µm) for improved current-carrying capacity, ESD protection circuits, and triple well isolation. The 0.18µ BCD process adds the combination of high density 1.8V digital CMOS with higher voltage drivers required for highly integrated Power SOC designs.

"The Jazz power platform offers a wide range of technology choices to allow our customers to integrate at any desired level and take advantage of a consistent design environment for quick time-to-revenue," said Chuck Fox, Vice President of Sales and Marketing, Jazz Semiconductor.

Jazz Semiconductor offers a full design kit and modeling support for the BCD process platform including support for digital standard cells and analog models for all devices. The design kit also includes a novel scalable model for the LDMOS devices that allows designers to vary the voltage rating (and Rdson) of the high voltage LDMOS devices continuously from 20 to 40V rather than making use of fixed cells as typically done in the past. This is said to provide IC designers an added tool in optimizing the trade-off between die area and voltage handling performance to result in the lowest die cost for a wider variety of applications.

"Jazz strives to deliver leading edge design platforms that enable our customers to realize optimal performance for their products while greatly reducing design cycle times. With our advanced scalable compact LDMOS models and pcells, we have provided our customers a custom solution to meet their design needs," said Dr. James Victory, Executive Director of IC Design Enablement at Jazz Semiconductor.