Vishay Releases New 25V TrenchFET® Gen III Power MOSFET
Vishay Intertechnology, Inc. has expanded its family of Gen III TrenchFET® power MOSFETs with the release of a new 25V n-channel device offering what the company claims is the industry’s lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK(R) SO-8 package type.
The SiR476DP features a maximum on-resistance of 2.1mΩ at a 4.5V gate drive and 1.7mΩ at a 10V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-dc converter applications, is 89.25nC at 4.5V.
According to the company, compared to the closest competing devices optimized for low conduction losses and low switching losses, these specifications represent an improvement for on-resistance of 32 % at 4.5V and 15 % at 10V, and a 42% lower FOM. Lower on-resistance and gate charge translate into lower conduction and switching losses.
The Siliconix SiR476DP will be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. The company claims that its low conduction and switching losses will enable more power-efficient and space-efficient designs for voltage regulator modules (VRMs), servers, and a wide range of systems using point-of-load (POL) power conversion.
Vishay has also released the new 25V SiR892DP and SiR850DP n-channel power MOSFETs. Respectively, the devices offer on-resistance at 4.5V of 4.2 and 9mΩ, on-resistance at 10V of 3.2 and 7mΩ, with typical gate charges of 20 and 8.4nC. All three new power MOSFETs are offered in the PowerPAK SO-8 package type. The devices are lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.
Samples and production quantities of the SiR476DP, SiR892DP, and SiR850DP are available now, with lead times of 10 to 12 weeks for large orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.75.
