New Industry Products

Vishay Releases First 20 & 30V N-Channel TrenchFET® Gen III Power MOSFETs With TurboFET™ Technology

December 03, 2008 by Jeff Shepard

Vishay Intertechnology, Inc. expanded its family of Gen III TrenchFET® power MOSFETs with the release of two 20V and two 30V n-channel devices that are said to be the first to offer TurboFET™ technology, which utilizes a new charge balanced drain structure to lower the gate charge by up to 45 %, enabling significantly lower switching losses and faster switching.

Vishay claims that the 20V SiS426DN device offers the industry’s lowest on-resistance times gate charge for a device with this voltage rating in the 3 by 3-mm PowerPAK® 1212-8 footprint. This key figure of merit (FOM) for MOSFETs in dc-to-dc converters is 76.6mΩ-nC at 4.5V and 117.60mΩ-nC at 10V for the SiS426DN, which features a low typical gate charge of 13.2nC at a 4.5V gate drive and 28 nC at a 10V gate drive.

According to Vishay, compared to the closest competing devices, these specifications represent a reduction in gate charge of 45% at 4.5V and 36% at 10V, and a 50% lower FOM. Lower gate charge is said to translate into more efficient switching at all frequencies, and in particular gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in dc-to-dc converters.

Vishay’s 30V TurboFET offering includes the new Si7718DN in the PowerPAK 1212-8, and the Si7784DP in the PowerPAK SO-8. Both MOSFETs offer typical gate charge of 13.7 nC at 4.5V and 30 nC at 10V, and on-resistance times gate charge FOMs of 112.34mΩ-nC at 4.5V and 180mΩ-nC at 10 V. A PowerPAK SO-8 version of the 20V SiS426DN device, the SiR496DP, is also available for high-current applications. All devices are halogen free and 100% Rg and UIS tested.

The devices will be used as the high-side MOSFET in synchronous buck converters, helping to save power in notebook computers, voltage regulator modules (VRMs), servers, and other systems using point-of-load (POL) power conversion.

Samples and production quantities of the new Gen III power MOSFETs with TurboFET technology are available now, with lead times of 10 to 12 weeks for large orders. Pricing for U.S. delivery starts at $0.32 in 100,000-piece quantities.