Vishay Releases Billion-Cell-Per-Square-Inch P-Channel TrenchFET Gen III Power MOSFET

Vishay Intertechnology, Inc. introduced a new 20V p-channel power MOSFET with what the company says is the lowest on-resistance ever achieved for a p-channel device in a 1.6 by 1.6mm footprint area. The new SiB457EDK is built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This technology allows what is described as a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET nearly in half.

With the release of this new device, TrenchFET Gen III p-channel power MOSFETs are now available in four surface-mount package types, including the thermally enhanced PowerPAK® SO-8, which offers what is said to be the industry’s lowest on-resistance down to 1.9mΩ in an SO-8 footprint area. The smallest device in the family so far, the SiB457EDK in the PowerPAK SC-75 is said to feature the industry’s lowest on-resistance in a 1.6 by 1.6mm footprint area. Its rDS(on) values range from 35mΩ at 4.5V to 130mΩ at 1.5V. These new SiB457EDK values are said to be up to 42% lower at 4.5 and 2.5V and 46% lower at 1.8V than the closest competing p-channel device with the same voltage ratings.

TrenchFET Gen III p-channel MOSFETs help to save energy in applications such as adaptor and load switches in notebook computers and industrial/general systems, as well as load switches in charging circuits and portable devices such as cell phones, smart phones, PDAs, and MP3 players. The low on-resistance provided by the milestone billion-cells-per-square-inch technology translates into lower conduction losses, saving power and prolonging battery life between charges. The following table summarizes the key specifications for the TrenchFET Gen III p-channel devices released to date.

The SiB457EDK specifies on-resistance ratings at four gate-to-source voltages, including a 1.5V rating that enables designs with smaller input voltages to be implemented with a higher safety margin. Its compact PowerPAK SC-75 package, meanwhile, reduces the space required for power circuitry, opening up real estate for other product features or enabling a smaller end product. The SiB457EDK also includes ESD protection of 2500V typical to enable field failure reductions while exhibiting low leakage current of only 5µA at V_GS = 8V.

The p-channel TrenchFET Gen III power MOSFET family is halogen-free in accordance with IEC 61249-2-21, compliant to RoHS Directive 2002/95/EC, and 100% Rg- tested.

Samples and production quantities of the new SiB457EDK TrenchFET power MOSFET are available now, with lead times of 10 to 12 weeks for larger orders. Pricing for U.S. delivery starts at $0.11 each in 100,000-piece quantities.