Vishay Releases 3 New 500V, 12A N-Channel Power MOSFETs
Vishay Intertechnology, Inc. released three new 500V, 12A n-channel power MOSFETs with ultra-low 0.555Ω maximum on-resistance at a 10V gate drive, and an improved gate charge of 48nC in TO-220, TO-220 FULLPAK, and D²PAK (TO-263) packages.
The low on-resistance of the SiHP12N50C-E3 (TO-220), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulsewidth modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer ac adapters, PC and LCD TVs, and open-frame power supplies.
In addition to their low on resistance, the devices feature a gate charge of 48nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 26.64Ω-nC.
The new n-channel MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. Compared to previous-generation MOSFETs, the SiHP12N50C-E3, SiHF12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and losses.
The devices are compliant to RoHS Directive 2002/95/EC and 100% avalanche-tested for reliable operation.
Samples and production quantities of the new power MOSFETs are available now, with lead times of eight to 10 weeks for larger orders.
