New Industry Products

Vishay Introduces New 30V P-Channel TrenchFET Gen III Power MOSFET

June 30, 2009 by Jeff Shepard

Vishay Intertechnology, Inc. released what it describes as the industry’s first 30V p-channel power MOSFET in the SO-8 footprint area to boast maximum on-resistance down to 2.6mΩ at a 10V gate drive and 3.75mΩ at 4.5V. With these specifications, the new Vishay Siliconix Si7145DP, the company claims that the latest member of the TrenchFET® Gen III p-channel family, achieves the lowest on-resistance ever for this voltage rating and footprint.

Packaged in the PowerPAK® SO-8, the Si7145DP will be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems. Its low on-resistance translates into lower conduction losses, allowing the Si7145DP to do a better job of saving power and prolonging battery life between charges. This capability is especially important in adaptor switches (switching between the adaptor/wall power or the battery power), which are always on and drawing current.

According to Vishay, the next-best 30V p-channel device in the SO-8 footprint available from a competitor features maximum on-resistance of 3.1mΩ at a 10V and 4.3mΩ at 4.5V, meaning 16% and 13% higher than the Si7145DP.

The device is 100% Rg- and UIS-tested and halogen-free. Additional p-channel TrenchFET Gen III power MOSFETs with a range of voltage ratings and package options will be released by Vishay throughout 2009.

Samples and production quantities of the Si7145DP are available now, with lead times of 10 to 12 weeks for larger orders. Pricing in for U.S, delivery 100,000-piece quantities is $0.69 per piece.