TriQuint Semiconductor Inc. (Hillsboro, OR) announced the introduction of a new high-power transmit amplifier for satellite ground terminal and millimeter wave digital radio applications requiring high linear power. The TGA4501 is fabricated using TriQuint's 0.25-micron gate length, power pHEMT process, which produces a high-frequency device performance comparable to that normally associated with 0.15-micron gate length devices, while providing high device yields of a mature production process.
The TGA4501 is offered in chip form. Bond pad and backside metalization is gold-plated for compatibility with eutectic alloy attachment methods as well as with thermocompression and thermosonic wire bonding. Each chip is 100-percent dc and RF tested on-wafer to ensure performance compliance. The TGA4501 is currently shipping in pre-production volumes, with expected ramp-to-full-volume production in the second half of 2002.
Production pricing for 10,000-piece quantities is $99 each. Delivery is available from stock to 12 weeks for higher-volume orders.
