Toshiba Offers High-Frequency SiGe Transistors

Toshiba Corp. (Japan) announced that it has developed high-frequency SiGe transistors that are capable of matching the low noise level of more expensive GaAs transistors. Utilizing an epitaxial-based, bipolar transistor process technology, the company was able to manufacture SiGe transistors that exhibit a noise figure of 0.52dB (2GHz) and 1.16dB (5.2GHz) with a gain of 17dB and 13dB, respectively. The transistors are suitable for use in ultra-high-frequency LNAs required by GPS and WLAN systems.

The four-pin SiGe transistors are packaged in the company's TESQ package measuring 1.2mm x 1.2mm x 0.52mm and are priced at about $0.42.