Toshiba extends Family of Ultra-Low Forward Voltage SBDs

Toshiba Electronics Europe (TEE) has extended its family of surface mount Schottky barrier diodes (SBDs) with a new device CxS15S30 device based on the latest Toshiba semiconductor process, which improves forward voltage and reverse current performance. The CxS15S30 SBD offers 1.5A and 30V maximum ratings for average rectified current and peak reverse voltage, respectively. Package options comprise an ultra-compact LGA type CST2C package (CCS15S30) measuring only 1.6mm x 0.8mm x 0.48mm, and a standard SOD-323 package (CUS15S30).

TEE’s new diode will be particularly suited to space-limited applications where high current handling and low forward voltage (VF) characteristics are key requirements. The CxS15S30 delivers the high-efficiency operation demanded by battery-powered and other power-sensitive designs. A low typical forward voltage rating of VF = 0.39V at 1.5A and the low typical reverse current of only 200µA ensures lowest loss operation in most common applications such as LED backlight circuits or current backflow prevention in battery charging. Featuring a total typical diode capacitance of just 200pF means that the CxS15S30 can also be used in general high-speed switching applications.