Toshiba Expands Line of High Speed Switching MOSFETS For Synchronous DC-DC Converters

Toshiba America Electronic Components, Inc. (TAEC) has added two new devices to its UMOS V-H Series high-speed switching MOSFETs to provide higher drain current (I_D ), and lower on-state resistance (R_DSON ), combined with the power efficiency advantages of the other members of the product family.

The TPCA8012-H and TPCA8019-H n-channel MOSFETs extend the UMOS V- H Series with higher drain current of 40 and 45A (max.) and lower R_DSON of 4.9mΩ and 3.1mΩ, respectively (max. value at V_GS = 10V). The UMOS V-H Series MOSFETs are targeted for use in synchronous dc-dc converters in power supplies for servers, desktop and mobile computers, and portable electronics devices.

"Our UMOS V-H Series MOSFETs are designed to reduce the size and improve the power efficiency of synchronous rectification dc-dc converters for notebook PCs, servers and on-board power supplies. The first members of the series have been well received, and these new devices provide higher performance options for power supply designers," said Jeff Lo, Business Development Manager, Discrete Power Products, for TAEC.

The new devices join nine other members of the UMOS V-H Series to provide a range of drain current, drain-source voltage, and a selection of other performance characteristics to meet various application requirements. Compared to previous process technology from Toshiba, the UMOS V-H Series improves many of the key parameters required for better power efficiency of low-side MOSFETs in a synchronous dc-dc converter, including lower on-state resistance (R_DSON) and reduced self-turn-on loss, achieved through lower gate-to-drain capacitance (C_gd), lower C gd /C_gs ratio, lower gate resistance (R_g), and optimized gate threshold voltage. On the high-side MOSFET, Toshiba UMOS V-H technology enables fast switching, achieved through low gate switch charge (QSW) and gate resistance (R_g).

The TPCA8012-H and TPCA8019-H are offered in SOP Advance packages with a footprint of 5.0 x 6.0mm to help minimize board area and device temperature. The TPCA8012-H features maximum drain current of 40A, a drain-source voltage maximum rating of 30V and a R_DSON of 4.9mΩ (max. value at V_GS = 10V). TPCA8019-H is also designed to operate with a 30V drain-source voltage maximum rating , with a maximum drain current of 45A and an R_DSON of 3.1mΩ (max. value at V_GS = 10V). The SOP Advance package from Toshiba features what is described as a 41% lower profile than a standard SOP-8 package, and enables approximately 47% higher power dissipation.

Samples of the TPCA8012-H and TPCA8019-H are available now, priced at $0.45 and $0.60, respectively.