Toshiba Adds 30V MOSFETs for DC-DC Conversion in TSON Advance Package
Toshiba America Electronic Components, Inc. (TAEC) has expanded its offering of 30V MOSFETs with six devices in TSON Advance packages. The new devices are intended for synchronous dc-dc converter applications in mobile and desktop computers, servers, game consoles and other electronic devices that require input voltage conversion for subsystems such as the processor, memory and other point-of-load devices.
Developed by Toshiba Corp., the devices are based on fifth and sixth generation UMOS V-H and UMOS VI-H process technologies to achieve low on-state resistance for the low side MOSFET and fast switching speed for high side MOSFET enabled through lower gate charge (Q(SW)). The thin, compact, 3.3mm x 3.3mm x 0.9mm TSON Advance package reduces mount area requirements by 64 percent compared to the widely used 5.0mm x 6.0mm SOP-8 package, while achieving the same power dissipation of 1.9W.
The new lineup includes five N-channel MOSFETs and one MOSBD, a combination MOSFET and Schottky Barrier Diode in a single die that provides a low inductance structure and thus, improves power efficiency. The lineup provides a range of characteristics to enable designers to meet various system requirements. Current ratings range from 13 to 26A, R(DS)(ON) (typ.) from 4.3 to 12.2mΩ, input capacitance(Ciss) from 990 to 2200 picofarads (pF) (typ.), and reverse transfer capacitance (Crss) from 54 to 140pF (typ.). Please see table below for details.
"With TSON Advance packaging, our latest MOSFETs offer designers new options to increase board density and save space, with a selection of high efficiency solutions for dc-dc conversion," said Jeff Lo, business development manager, Discrete Power Devices, for TAEC.
Samples of these latest additions to the Toshiba MOSFETs lineup in TSON packages are available now, with mass production beginning to ramp. Prices in sample quantities start at $0.35.
