TAEC Unveils New STP Package for Power MOSFETs

Toshiba America Electronic Components Inc. (TAEC, Japan and Irvine, CA) announced the availability of its new ultra-thin Smart Thin Package (STP) surface-mount package for power MOSFETs. TAEC also announced the first MOSFET devices using STP technology, the TPCT4201 and TPCT4202. To save critical printed circuit board space, the new package is only 0.60 mm in height and manufactured using lead-free finish 1 terminals.

Developed by Toshiba Corp. (Japan), the new STP packaging is the thinnest in its class and is 64% smaller than previous TSSOP-8 packaging. The dual N-channel TPCT4201 and TPCT4202 are well-suited for lithium-ion battery applications used in cellular phones, digital still cameras, camcorders and other portable consumer electronics products.

The new STP MOSFETs feature a small footprint due to the small and thin packaging. Both devices carry a maximum power dissipation of 1.7 W, a dc drain current of 6 A, a pulse drain current of 24 A, a gate-source voltage of 12 V, and low leakage current of just 10 mA.

Samples of the TPCT4201 and TPCT4202 MOSFETs with STP packaging are available now, priced at $0.40 each, respectively. Both devices are scheduled to begin in mass production this month.