Superjunction MOSFETs Reduce both On-Resistance and EMI

Toshiba Electronics Europe pre-announced this week at PCIM 2016 the development of its next-generation of superjunction (SJ) deep trench semiconductor technology for high-efficient power MOSFETs. Devices based on the new DTMOS V process operate with lower EMI noise and reduced RDSon compared to previous DTMOS IV MOSFETs. Initial devices will be rated for 600V and 650V.

As with the previous DTMOS IV semiconductor technology, DTMOS V is based on a single epitaxial process involving ‘deep trench etching’ followed by P-type epitaxial growth. The deep trench filling process results in a narrowing of cell pitch and a lowering of RDSon when compared with more conventional planar processes. Toshiba’s deep trench process allows an improved thermal coefficient of RDSon compared to conventional super junction MOSFETs using multi epitaxial growth process.

With DTMOS V, Toshiba has been able to reduce RDSon of the DPAK TK290P60Y by up to 17% compared with the lowest RDSon available from the TK12P60W DTMOS IV MOSFET. The company has also further optimized the trade-off between switching performance and EMI noise.

DTMOS V MOSFETs will simplify the design and improve the performance of power conversion applications, including switching power supplies, power factor correction designs, LED lighting and other ac-dc applications. The first MOSFETs based on the fifth-generation process will offer ratings of 600V and 650V and be supplied in DPAK (TO-252) and TO-220SIS (smart isolation) packaging. Maximum ON resistance ratings will range from just 0.29Ω to 0.56Ω.