STMicro Offers SuperMESH3 Power MOSFETs For Lighting & SMPS Applications

STMicroelectronics states that it has further increased the ruggedness, switching performance and efficiency of power MOSFETs for lighting ballasts, where they are used in the PFC and Half Bridge sections, as well as in switching power supplies. The use of SuperMESH3 technology with lower on-resistance is said to guarantee that higher efficiency is obtained. The company also claims that, due to their dv/dt performance and higher breakdown-voltage margin, these new devices will provide enhanced reliability and safety.

The first SuperMESH3 devices introduced are the 620V STx6N62K3, which will be followed by the STx3N62K3, also at 620V, as well as the 525V STx7N52K3 and STx6N52K3. The savings in on-resistance enabled by SuperMESH3 reduce RDS(on) in DPAK packages to 1.28Ω in the STD6N62K3 at 620V and 0.98Ω in the STD7N52K3 at 525V boosting operating efficiency in applications such as low-energy lamp ballasts. The new technology also reduces reverse-recovery time (Trr), gate charge, and intrinsic capacitance, leading to improved switching performance and enabling higher operating frequencies.

As a further advantage of ST’s SuperMESH3 technology, which combines strip topology with an optimized vertical structure, the company claims that the new devices also exhibit one of the best-in-class dv/dt behaviors. This is said to translate into increased reliability and safety in lighting and other consumer electrical applications.

The STx6N62K3 is available in IPAK, DPAK, TO-220, and TO-220FP packages, priced from $0.62 for 1000 pieces.

The STx3N62K3 at 2.5Ω will be available in IPAK, DPAK, D2PAK, TO-220 and TO-220FP packages. The STx7N52K3 at 0.98Ω will be introduced in DPAK, D2PAK, TO-220, and TO-220FP packages and the STx6N52K3 at 1.2Ω will be available in DPAK and TO-220FP packages. These lines will enrich the 620 and 520V portfolio of SuperMESH3 products, which will be in volume production by Q4 2008.