ST Announces New-Technology Power MOSFET Family
STMicroelectronics (ST) announced two new Power MOSFETs, intended for the most demanding dc-dc converter applications, which use the latest version of ST’s proprietary STripFET™ technology to deliver what is described as extremely low conduction and switching losses, up to 3W lower in a typical voltage regulator module, and to achieve what is described as the lowest figure of merit – FOM = Rds(on) x Gate Charge (Qg) – among comparable competitive devices.
In addition to the high efficiency, the new MOSFETs allow practical circuits to operate at higher-than-normal switching frequencies, enabling a reduction in the size of the circuit’s passive components. For example, a 10% increase in switching frequency can lead to a 10% reduction in passive components required by the output filter.
The STD60N3LH5 and STD85N3LH5 are the first in a new series of STripFET V devices which are said to provide superior performance and increased efficiency as a result of low ON-resistance and significantly lower total gate charge. Both are 30V (BVDSS) devices. With gate charge (Qg) of just 8.8nC, and Rds(on) of 7.2mΩ at 10V, the STD60N3LH5 is a suitable choice as a control FET in non-isolated dc-dc step-down converters. The 4.2mΩ Rds(on) at 10V of the STD85N3LH5, with a Qg of 14nC, makes it a suitable choice as a synchronous FET. Both devices are produced in DPAK and IPAK packages and will be soon available in other package options including SO-8, PowerFLAT 3.3 x 3.3, PowerFLAT 6x5, and PolarPAK®. The new series of STripFET V devices are suitable for notebook, server, telecom and networking applications.
ST’s STripFET technology makes use of very high ‘equivalent cell density’ and smaller cell features to achieve extremely low ON-resistance and losses, while using less silicon area. STripFET V is the latest generation of this technology, achieving approximately 35% improvement in the critical indicator of silicon resistance and active area, plus some 25% reduction in total gate charge per active area, compared to the earlier generation.
Both devices are in full production. The STD60N3LH5 is priced at $0.65 in quantities of 2500 pieces, while the STD85N3LH5 is priced at $0.95 in quantities of 2500 pieces.
