Siliconix Intros Si4320DY/Si7356DP Power MOSFETs
Siliconix Inc. (Santa Clara, CA), a subsidiary of Vishay Intertechnology Inc. (Malvern, PA), announced a next-generation TrenchFET technology yielding power MOSFETs that break the 4-milliohm barrier in the SO-8 footprint. The new products built on the TrenchFET Gen II technology are based on a 300-million-cells-per-square-inch platform offering a specific on-resistance of 12 milliohms per square millimeter, a 30% improvement over previous-generation silicon. In addition to a higher cell density, the TrenchFET Gen II technology uses a new stripe topology that reduces mask count by 28%, optimizing turnaround and reducing costs.
The first products built on the new technology are the 30V n-channel Si4320DY (LITTLE FOOT SO-8) and Si7356DP (PowerPAK SO-8), both of which are designed to serve as high-performing, cost-effective solutions for low-side operation in synchronous buck dc/dc converters in notebook computers, and for secondary synchronous rectification in fixed telecom applications. The on-resistance specifications are 4 milliohms at 4.5V and 3 milliohms at 10V, values that are 17% and 14% lower, respectively. A high threshold voltage and low Qgd/Qgs ratio of 0.8 offer substantial shoot-through protection and add to efficiency by providing a good margin for noise and voltage spikes.
The new Si4320DY and Si7356DP provide efficient in-circuit performance that reduces power consumption and prolongs battery life in end systems. The increased efficiency allows systems to run cooler and contributes to a cycle in which on-resistance and conduction losses are further reduced. A typical application circuit test on a dual-phase evaluation board demonstrates a gain of nearly 1% in efficiency and a reduction of device temperature by 7°C.
Samples and production quantities of the Si4320DY and Si7356DP are available now with lead times of four to six weeks for larger orders. Pricing for US delivery in 100,000-piece quantities starts at $0.58.
