New Industry Products

Renesas Introduces DrMOS-Compliant Power Switching Device for CPU Power Supplies

December 05, 2006 by Jeff Shepard

Renesas Technology America, Inc. announced the R2J20602NP. The device integrates a driver IC and high- and low-side power MOSFETs in a 56-pin QFN package that conforms to the integrated Driver-MOSFET (DrMOS) package standard. The driver-MOSFET product is well-suited for voltage regulators, dc-dc switching power supplies, and point-of-load (POL) converters essential for providing the stable low-voltage dc power needed in PCs, servers, and many other types of electronic equipment.

The R2J20602NP is Renesas' second-generation driver-MOSFET product that operates at up to a 2MHz switching frequency and has a maximum output current of 40A. When operating at 1MHz with Vin = 12V, Vout = 1.3V, it achieves a maximum efficiency of approximately 89%, which is claimed to be the industry's highest level. With an output current of 25A, power loss is only 4.4W. The company claims that this is the industry's lowest level and is at least 20% lower than the first-generation R2J20601NP device, with which it is package and pin compatible for easy design upgrades.

"Manufacturers of blade servers, hard disk devices, PCs, test equipment, and communication equipment are being challenged to find ways to handle the trend to lower voltages, larger currents, and higher operating frequencies for electronic components such as CPUs, FPGAs, and memories," said Tetsuo Sato, Director of Business Development, Solutions Business Unit at Renesas Technology America. "As a result, they find it essential to design or purchase power supply circuits that offer faster response, output lower voltages and more current, yet are also smaller and more efficient. Our new R2J20602NP power device addresses these issues directly. This compact, second-generation DrMOS compliant product delivers the best power efficiency in the industry."

The R2J20602NP's package is a RoHS-compliant, high heat-radiation type with a small (8mm x 8mm) mounting-area. Compliant with the DrMOS package standard proposed by Intel Corp., it uses a wireless copper-plate construction technique for internal connections, greatly reducing resistance and parasitic inductance within the package. Pins for large-current paths occupy most of the rear surface of the package and facilitate heat dissipation.